s mhop microelectronics c orp. a stb/p434s symbolv ds v gs i dm a i d units parameter 40 60 176 vv 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 40v 60a 11.5 @ vgs=4.5v 9.2 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-220 and to-263 package. n-channel logic level enhancement mode field effect transi stor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 1.0 www.samhop.com.tw nov,14,2008 1 details are subject to change without notice. t c =25 c w p d c 62.5 -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 62.5 c/w thermal resistance, junction-to-ambient r ja 2 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj sigle pulse avalanche energy d t c =70 c w a a a 91 48 40 stb series to-263(dd-pak) g s d stp series to-220 s d g s g d a
symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) 1.3 v 7.6 g fs 18 s c iss 1160 pf c oss 211 pf c rss 135 pf q g 17 nc 24 59 11 t d(on) 20 ns t r ns t d(off) ns t f ns v ds =20v,v gs =0v switching characteristics v dd =20v i d =1a v gs =10v r gen =3.3 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =30a v ds =10v , i d =30a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =25a 9.2 8.8 11.5 m ohm c f=1.0mhz c stb/p434s ver 1.0 www.samhop.com.tw nov,14,2008 2 1.7 3 v sd nc q gs nc q gd 2.1 5 gate-drain charge gate-source charge diode forward voltage v ds =20v,i d =30a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =10a 0.84 1.3 v i s maximum continuous drain-source diode forward current 10 a notes nc 10 v ds =20v,i d =30a,v gs =10v v ds =20v,i d =30a,v gs =4.5v b a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ _
stb/p434s ver 1.0 www.samhop.com.tw nov,14,2008 3 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 8060 40 20 0 0 0.5 1 1.5 2 2.5 3 100 v g s =10v v g s =3v v g s =2.5v v g s =3.5v v g s =4v 60 48 36 24 0 0 0.7 1.4 2.1 2.8 3.5 4.2 12 25 c -55 c t j=125 c 16 12 8 4 1 20 40 60 80 100 1 v gs =10v v gs =4.5v 20 2.01.8 1.6 1.4 1.2 1.0 0 0 25 50 125 100 75 v gs =10v i d =30a v gs =4.5v i d =25a 150 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 1.40 1.30 1.20 1.10 1.00 0.90 0.80 i d =250ua
stb/p434s ver 1.0 www.samhop.com.tw nov,14,2008 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 3025 20 15 10 5 0 2 4 6 8 10 0 i d =30a 75 c 125 c 25 c 10 1 0 0.24 60 20 1.20 0.48 0.72 0.96 1800 1500 1200 900 600 300 0 ciss coss crss 0 10 15 20 25 30 10 86 4 2 0 0 3 6 9 12 18 21 24 27 v ds =20v i d =30a 500 100 10 1 0.1 1 10 40 100 v g s =10v s ingle p uls e t a =25 c r ds (o n) l i m it 125 c 25 c 5 1 10 100 100 10 1 1000 3 vds=20v,id=1a vgs=10v td(off) td(on) tr tf 10ms d c 1 m s 100us
l + - 20v stb/p434s www.samhop.com.tw nov,14,2008 5 unclamped inductive test circuit figure 13a. unclamped inductive waveforms figure 13b. dr iv e r 15v v dd d.u.t i as 0.01 v ds r g tp tp v (b r ) ds s i as ver 1.0 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r j c (t)=r (t) * 2. =s ee datas heet 3. t j m- t c = p * (t ) 4. duty c ycle, d=t1/t2 r j c r j c r j c 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 t rans ient t hermal impedance s quare wave p uls e duration (ms ec) f igure 14. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective
stb/p434s www.samhop.com.tw nov,14,2008 6 package outline dimensions to-220 preliminary
stb/p434s www.samhop.com.tw nov,14,2008 7 package outline dimensions to-263ab ver 1.0
stb/p434s www.samhop.com.tw nov,14,2008 8 to-220/263ab tube 17.5 2.35 5.60 0.20 + 5.40 0. + 12.40 5.70 7.67 0.20 + 15.7 0.2 + 7.2 0.1 + 3.7 0.2 + 5.4 0.2 + 3.5 0.2 + 2.6 32 0.5 0.1 + 2.6 0.2 + 536 1 + 5.10 5.80 4.30 antistatic 1.70 2.50 ver 1.0
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